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Typical Characteristics
3000
1000
100
100us
1000
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
10
SINGLE PULSE
TJ = MAX RATED
STARTING T J = 25 o C
1
TC = 25oC
OPERATION IN THIS
AREA MAY BE
1ms
10ms
10
STARTING T J = 150 o C
0.1
1
LIMITED BY rDS(on) 100ms DC
10 90
V DS , DRAIN TO SOURCE VOLTAGE (V)
1
0.01
0.1
1 10 100
t AV , TIME IN AVALANCHE (ms)
1000 5000
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
160
120
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 5V
160
120
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 20V
V GS = 10V
V GS = 7V
T J = -55 C
80
40
T J = 175 o C
o
80
40
V GS = 6V
V GS = 5V
V GS = 4.5V
V GS = 4V
T J = 25 o C
0
0
1 2 3 4 5 6
V GS , GATE TO SOURCE VOLTAGE (V)
7
0
0.0
0.5 1.0
V DS , DRAIN TO SOURCE VOLTAGE (V)
1.5
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
8
I D = 80A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.8
1.6
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
6
1.4
4
T J = 175 o C
1.2
1.0
2
0
4
T J = 25 o C
6 8
V GS , GATE TO SOURCE VOLTAGE ( V )
10
0.8
0.6
-80
I D = 80A
V GS = 10V
-40 0 40 80 120 160
T J , JUNCTION TEMPERATURE ( o C )
200
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDB8160_F085 Rev. C
5
www.fairchildsemi.com
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